TW015Z120C,S1F Single FETs, MOSFETs_Discrete Semiconductor Devices_Electronic Components_Integrated Electrical Appliances_Module Circuits_Computer Accessories

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TW015Z120C,S1F

Single FETs, MOSFETs

G3 1200V SIC-MOSFET TO-247-4L 1

Tube

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$67.4630

inventory: 98

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$67.4630

$59.2790

$1,778.3700

120

$55.1980

$6,623.7600

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product details

TW015Z120C,S1F

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Specification sheet：

TW015Z120C,S1F

Single FETs, MOSFETs

G3 1200V SIC-MO

Single FETs, MOSFETs

Tube

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Power Dissipation (Max)	431W (Tc)
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)	18V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V