G2K2P10D3E Single FETs, MOSFETs_Discrete Semiconductor Devices_Electronic Components_Integrated Electrical Appliances_Module Circuits_Computer Accessories

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G2K2P10D3E

Single FETs, MOSFETs

Goford Semiconductor

MOSFET P-CH ESD 100V 10A DFN3*3-

Tape & Reel (TR)

4970

Price:

$0.6380

inventory: 4970

Total number

Quantity

Price

Total price

$0.6380

$0.5390

$5.3900

100

$0.3740

$37.4000

500

$0.2970

$148.5000

1000

$0.2420

$242.0000

2000

$0.2090

$418.0000

5000

$0.1980

$990.0000

10000

$0.1870

$1,870.0000

25000

$0.1870

$4,675.0000

50000

$0.1760

$8,800.0000

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product details

G2K2P10D3E

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

G2K2P10D3E

Single FETs, MOSFETs

Goford Semiconductor

MOSFET P-CH ESD

Single FETs, MOSFETs

Tape & Reel (TR)

4970

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 6A, 10V
Power Dissipation (Max)	31W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1668 pF @ 50 V