The MJE3055T, a bipolar transistor widely utilized in audio amplifiers, switching regulators, and other fields, is manufactured by several semiconductor companies, including ST Microelectronics, ON Semiconductor, Fairchild (formerly Fairchild Semiconductor/National Semiconductor), and Motorola. This article delves into the primary specifications and technical parameters of the MJE3055T, aiding readers in better understanding and utilizing this component.
Manufacturer and Packaging
The MJE3055T is produced by reputable semiconductor firms such as ST Microelectronics, ON Semiconductor, Fairchild, and Motorola. These manufacturers typically offer the MJE3055T in a TO-220 package, a common encapsulation for high-power devices. The TO-220 package allows for superior thermal dissipation, making it suitable for high-power applications.
Electrical Specifications
The electrical specifications of the MJE3055T are among its most critical technical parameters, determining its performance and suitability for various scenarios.
Polarity: The MJE3055T is an NPN-type transistor. NPN transistors are characterized by current flowing into the base (B), exiting through the collector (C), with the emitter (E) providing the main current path.
Voltage Ratings: The MJE3055T has a collector-emitter voltage (VCEO) of 60V, a collector-base voltage (VCBO) of 70V, and an emitter-base voltage (VEBO) of 5V. These voltage ratings ensure the transistor will not be damaged under normal operating conditions.
Current Ratings: The MJE3055T has a continuous collector current (IC) of 10A, with a maximum DC collector current also of 10A. This makes it ideal for high-current applications.
Power Dissipation: The power dissipation (PD) of the MJE3055T is 75W, meaning it can safely dissipate 75W of power under specified conditions.
Frequency Characteristics: The MJE3055T has a gain-bandwidth product (fT) of 2MHz, a metric for measuring the transistor's amplification capability at high frequencies.
DC Current Gain: The DC current gain (hFE) of the MJE3055T, at 4A and 4V, is a minimum of 20 and can reach a maximum of 400. This indicates that under specific conditions, the ratio of collector current to base current can vary between 20 and 400.
Operating Temperature: The operating temperature range of the MJE3055T is -55°C to +150°C. This ensures the transistor can function normally within a wide temperature range.
Physical Parameters
Beyond electrical specifications, the physical parameters of the MJE3055T are also important factors to consider during design and use.
Dimensions: The MJE3055T measures 10.4mm in length, 4.6mm in width, and 9.15mm in height. These dimensions make it relatively easy to layout and mount on a PCB.
Mounting Method: The MJE3055T is mounted through-hole (Through Hole), meaning it can be secured by soldering into through-holes on the PCB.
Pin Configuration: The MJE3055T has three pins: collector (C), base (B), and emitter (E). These pins connect the external circuit through the TO-220 package.
Applications and Characteristics
With its high current, high power, and wide operating temperature range, the MJE3055T is an ideal choice for audio amplifiers, switching regulators, and other fields. Its excellent Safe Operating Area (SOA) makes it perform exceptionally well in high-fidelity audio amplifiers, while its high current-handling capability makes it suitable for switching regulators and other high-power applications.
Conclusion
In summary, the MJE3055T is a high-performance NPN bipolar transistor with a wide range of applications and impressive electrical properties. By understanding its key electrical specifications and physical parameters, one can better design and utilize this component to meet the demands of various high-power and high-current applications. Whether in audio amplifiers or switching regulators, the MJE3055T demonstrates its superior performance and reliability, making it a trustworthy choice for engineers and designers.
ICAVENT Electronics is a hybrid IC distributor of electronic components.
Established in March 2020 ，We have excellent global sales team and perfect sales network.We also have logistics warehouses in Hong Kong and Shenzhen.Our company is characterized by high-quality elite team and the business of our company has scattered more than 30 countries in all regions of the world.
The MJE3055T, a bipolar transistor widely utilized in audio amplifiers, switching regulators, and other fields, is manufactured by several semiconductor companies, including ST Microelectronics, ON Semiconductor, Fairchild (formerly Fairchild Semiconductor/National Semiconductor), and Motorola. This article delves into the primary specifications and technical parameters of the MJE3055T, aiding readers in better understanding and utilizing this component.
Manufacturer and Packaging
The MJE3055T is produced by reputable semiconductor firms such as ST Microelectronics, ON Semiconductor, Fairchild, and Motorola. These manufacturers typically offer the MJE3055T in a TO-220 package, a common encapsulation for high-power devices. The TO-220 package allows for superior thermal dissipation, making it suitable for high-power applications.
Electrical Specifications
The electrical specifications of the MJE3055T are among its most critical technical parameters, determining its performance and suitability for various scenarios.
Polarity: The MJE3055T is an NPN-type transistor. NPN transistors are characterized by current flowing into the base (B), exiting through the collector (C), with the emitter (E) providing the main current path.
Voltage Ratings: The MJE3055T has a collector-emitter voltage (VCEO) of 60V, a collector-base voltage (VCBO) of 70V, and an emitter-base voltage (VEBO) of 5V. These voltage ratings ensure the transistor will not be damaged under normal operating conditions.
Current Ratings: The MJE3055T has a continuous collector current (IC) of 10A, with a maximum DC collector current also of 10A. This makes it ideal for high-current applications.
Power Dissipation: The power dissipation (PD) of the MJE3055T is 75W, meaning it can safely dissipate 75W of power under specified conditions.
Frequency Characteristics: The MJE3055T has a gain-bandwidth product (fT) of 2MHz, a metric for measuring the transistor's amplification capability at high frequencies.
DC Current Gain: The DC current gain (hFE) of the MJE3055T, at 4A and 4V, is a minimum of 20 and can reach a maximum of 400. This indicates that under specific conditions, the ratio of collector current to base current can vary between 20 and 400.
Operating Temperature: The operating temperature range of the MJE3055T is -55°C to +150°C. This ensures the transistor can function normally within a wide temperature range.
Physical Parameters
Beyond electrical specifications, the physical parameters of the MJE3055T are also important factors to consider during design and use.
Dimensions: The MJE3055T measures 10.4mm in length, 4.6mm in width, and 9.15mm in height. These dimensions make it relatively easy to layout and mount on a PCB.
Mounting Method: The MJE3055T is mounted through-hole (Through Hole), meaning it can be secured by soldering into through-holes on the PCB.
Pin Configuration: The MJE3055T has three pins: collector (C), base (B), and emitter (E). These pins connect the external circuit through the TO-220 package.
Applications and Characteristics
With its high current, high power, and wide operating temperature range, the MJE3055T is an ideal choice for audio amplifiers, switching regulators, and other fields. Its excellent Safe Operating Area (SOA) makes it perform exceptionally well in high-fidelity audio amplifiers, while its high current-handling capability makes it suitable for switching regulators and other high-power applications.
Conclusion
In summary, the MJE3055T is a high-performance NPN bipolar transistor with a wide range of applications and impressive electrical properties. By understanding its key electrical specifications and physical parameters, one can better design and utilize this component to meet the demands of various high-power and high-current applications. Whether in audio amplifiers or switching regulators, the MJE3055T demonstrates its superior performance and reliability, making it a trustworthy choice for engineers and designers.
ICAVENT Electronics is a hybrid IC distributor of electronic components.
Established in March 2020 ，We have excellent global sales team and perfect sales network.We also have logistics warehouses in Hong Kong and Shenzhen.Our company is characterized by high-quality elite team and the business of our company has scattered more than 30 countries in all regions of the world.
